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Design and maskless fabrication of ultrathin suspended membranes of GaN

Identifieur interne : 005700 ( Main/Exploration ); précédent : 005699; suivant : 005701

Design and maskless fabrication of ultrathin suspended membranes of GaN

Auteurs : I. M. Tiginyanu [Moldavie] ; V. Popa ; M. A. Stevens-Kalceff [Australie] ; D. Gerthsen [Allemagne] ; P. Brenner [Allemagne] ; D. Pavlidis [France]

Source :

RBID : ISTEX:C7C181A17DBE79ACECD10DB0EC9D68F5EE45CAC7

Descripteurs français

English descriptors

Abstract

We report the maskless fabrication of ultrathin suspended GaN membranes designed by focused ion beam treatment of the GaN epilayer surface with subsequent photoelectrochemical etching. This technological approach allows the fabrication of ultrathin membranes, as well as supporting micro/nanocolumns in a controlled fashion. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence. These results pave the way for the fabrication of ultrathin suspended GaN membranes for MEMS/NEMS applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Url:
DOI: 10.1002/pssr.201206020


Affiliations:


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Le document en format XML

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<div type="abstract" xml:lang="en">We report the maskless fabrication of ultrathin suspended GaN membranes designed by focused ion beam treatment of the GaN epilayer surface with subsequent photoelectrochemical etching. This technological approach allows the fabrication of ultrathin membranes, as well as supporting micro/nanocolumns in a controlled fashion. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence. These results pave the way for the fabrication of ultrathin suspended GaN membranes for MEMS/NEMS applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</div>
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